| PART |
Description |
Maker |
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| RFP60P03 RF1S60P03SM FN3951 RFG60P03 |
60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs
60A 30V 0.027 Ohm P-Channel Power MOSFETs
From old datasheet system
60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFP50N05L04 RFP50N05LNL |
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Austin Semiconductor
Intersil, Corp.
|
| HUF76639S3S HUF76639P3 FN4694 |
From old datasheet system
50A 100V 0.027 Ohm N-Channel Logic Level UltraFET Power MOSFET
50A/ 100V/ 0.027 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| AP4511GH-A |
Simple Drive Requirement, Good Thermal Performance
8.6 A, 35 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
|
Advanced Power Electronics Corp.
|
| STS6PF30L |
P-CHANNEL 30V - 0.027 ohm - 6A SO-8 STripFET⑩ POWER MOSFET
|
STMicroelectronics
|
| STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
|
ST Microelectronics
|
| HUF76009P3 HUF76009D3S |
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
